Friday, October 05, 2007

Image Sensors in IEDM 2007 Program

IEDM 2007 program has been published. The image sensor session is here:

38.1 A 0.5μm Pixel Frame-Transfer CCD Image Sensor in 110nm CMOS, K. Fife, A. El Gamal, H.-S. Philip Wong, Stanford University

Keith Fife was the key person in Smal Camera startup. He has many bright ideas and every his paper is certainly worth reading.

38.2 Development of a Production-Ready, Back-Illuminated CMOS Image Sensor with Small Pixels, T, Joy, S. Pyo, S. Park, C. Choi, C. Palsule, H. Han, C. Feng, S. Lee, J. McKee, P. Altice, C. Hong, C. Boemler, J. Hynecek, J. Lee, D. Kim, H. Haddad, and B. Pain, Magnachip Corp.

Backside illumination is the future of imaging, the only question is when this future becomes reality. Many companies look in this direction. It's interesting to see what is the pixel size that Magnachip was able to achieve. I'm eager to see the results of its sensors, such as pixel crosstalk in blue and image lag.

38.3 Two-Transistor Active Pixel Sensor for High Resolution Large Area Digital X-ray Imaging, F. Taghibakhsh, K.S. Karim, Simon Fraser University

I'm not sure why transistor count is important in X-ray sensors. The pixels are supposed to be big, it should be sufficient room for as many transistors as needed.

38.4 Fully Implantable Retinal Prosthesis Chip with Photodetector and Stimulating Electrode Array, T. Tanaka, T. Kobayashi, K. Komiya, K. Sato, T. Watanabe, T. Fukushima, H. Tomita, H. Kurino, M. Tamai, and M. Koyanagi, Tohoku University

38.5 3D real-time CCD imager based on Background-Level-Subtraction scheme, Y. Hashimoto, F. Tsunesada, K. Imai, Y. Takada, K. Taniguchi*, Matsushita Electric Works, Ltd., *Osaka University

No comments:

Post a Comment

All comments are moderated to avoid spam and personal attacks.